| PART |
Description |
Maker |
| LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins
64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins
64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的（8192字?8位）与光电，CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| LC3564S LC3564SM LC3564SS LC3564ST-10 LC3564ST-70 |
64K (8192 words x 8 bits) SRAM 64K的（8192字8位）SRAM
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| TC5564 |
8192 WORD X 8 BIT CMOS STATIC RAM
|
Toshiba Semiconductor
|
| HN27C64G |
8192-word x 8-bit UV Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
| MCM67A618 MCM67A618FN10 MCM67A618FN12 MCM67A618FN1 |
64K x 18 Bit Asychronous/Latched Address Fast Static RAM 64K X 18 CACHE TAG SRAM, 10 ns, PQCC52
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| AS7C31026B AS7C31026B-10JCN AS7C31026B-10JI AS7C31 |
SRAM - 3.3V Fast Asynchronous
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SOIC -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-SSOP -40 to 85
Replaced by SN74LV174A : Hex D-Type Flip-Flop With Clear 16-TSSOP -40 to 85
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SSOP -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Hex D-Type Flip-Flops With Clear 16-SOIC -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PDSO44
3.3 V 64K X 16 CMOS SRAM
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| NMC27C64N |
65,536-BIT (8192 X 8) CMOS EPROM 65,536位（8192 × 8）的CMOS存储
|
Fairchild Semiconductor, Corp.
|
| LC62F0164A |
16-Bit Single-Chip Microcontroller with On-Chip 64K-Word Flash EEPROM and 1K-Word RAM
|
SANYO[Sanyo Semicon Device]
|
